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t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 1 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com applications ? communications ? electronic warfare ? test instrumentation ? emc amplifier general description triquints tga2576 - 2 - f l is a wideband power amplifier fabricated on triquints pro ven 0.25um gan on sic production technology . operating from 2.5 to 6 ghz, the tga2576 - 2 - fl achieves 4 0w of saturated output power, greater than 3 6 % power - added efficiency and 29 db small signal gain. for ideal thermal management and handling, the tga2576 - 2 - fl is offered in a cuw - based flanged packaged and can oper ate in both cw and pulsed modes. both rf ports are fully matched to 50 , the tga2576 - 2 - f l is ideally suited to support a variety of commercial and defense related a pp lication s. lead - free and rohs compliant evaluation boards are available up on request. ordering information part eccn description tga25 7 6 - 2 - f l 3a001.b.2.a 2 .5 to 6 ghz 40w gan p a product features ? frequency range: 2.5 to 6 ghz ? p sat : 46.5 dbm @ p in = 26dbm , cw ? pae: 3 6 % ? small signal gain: 29 db ? bias: v d = 30 v, i d q = 1.55 a, v g = ? 2 .5 v typical ? dimensions: 1 1 . 4 x 1 7 . 3 x 3. 0 mm . functional block diagram p in configuration p in no. symbol 1 , 5 v g 2, 4, 7, 9 n/c 3 rf in 6 , 10 v d 8 rf out
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 2 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0 v gate voltage (v g ) ?5 to 0 v drain current (i d ) 50 00 ma gate current (i g ) ? 1 8 to 35 ma power dissipation (p diss ) 9 3 w rf input power , cw, 50 , t = 25c 28 dbm channel tremperature (t ch ) 275 c mounting temperature (30 seconds) 260 c storage temperature ?40 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 30 v drain current (i d q ) 1550 ma drain current under rf drive (i d _ drive ) 43 00 ma gate voltage (v g ) - 2.5 v electrical specifications are measured at specified test conditions. specifications are not guaranteed over all operating conditions. electrical specifications test conditions unless otherwise noted: 25 c, v d = 30 v, i d q = 1 55 0 ma, v g = ? 2 . 5 v typical , cw parameter min typical max units operational frequency range 2.5 6 ghz small signal gain 29 db output power at saturation (pin = 26 dbm) 4 6.5 dbm power - added efficiency (pin = 26 dbm) 3 6 (mid - band) % gain temperature coefficient - 0.02 db/ c power temperature coefficient - 0.02 dbm/ c
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 3 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1 ) t base = 85c 2.0 4 oc/w channel temperature under rf drive (t ch ) v d = 30 v, i d _drive = 3 600 ma, p out = 46 dbm, p diss = 68 w 2 2 4 c median lifetime under rf drive (t m ) 1.6 9 x 10^ 6 hours notes: 1. m easured from junction to center of package backside . median lifetime test conditions: v d = 40v; failure criteria is 10% reduction in i d_max
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 4 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com typical performance conditions unless otherwise specified: v d = 30v, i dq = 1.55a, v g = - 2.5v typical, cw 0 5 10 15 20 25 30 35 2 3 4 5 6 7 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c 36 38 40 42 44 46 48 50 2.5 3 3.5 4 4.5 5 5.5 6 p out (dbm) frequency (ghz) power vs. frequency vs. temperature -40c +25c +85c p in = 26dbm 0 9 18 27 36 45 54 63 2.5 3 3.5 4 4.5 5 5.5 6 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 26dbm
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 5 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com typical performance typical performance (cont.) conditions unless otherwise specified: v d = 30v, i dq = 1.55a, v g = - 2.5v typical, cw 0 9 18 27 36 45 54 63 0 8 16 24 32 40 48 56 0 4 8 12 16 20 24 28 pae (%) p out (dbm), gain (db) input power (dbm) p out , gain, pae vs. p in temp.=+25 c p out gain pae freq.= 2.5ghz 0 8 16 24 32 40 48 56 0 8 16 24 32 40 48 56 0 4 8 12 16 20 24 28 pae (%) p out (dbm), gain (db) input power (dbm) p out , gain, pae vs. p in temp.=+25 c p out gain pae freq.= 4.0ghz 100 800 1500 2200 2900 3600 4300 5000 0 8 16 24 32 40 48 56 0 4 8 12 16 20 24 28 drain current (ma) p out (dbm) input power (dbm) power, i d vs. p in temp.=+25 c p out i d freq = 2.5ghz 100 800 1500 2200 2900 3600 4300 5000 0 8 16 24 32 40 48 56 0 4 8 12 16 20 24 28 drain current (ma) p out (dbm) input power (dbm) power, i d vs. p in temp.=+25 c p out i d freq.= 4.0ghz 0 8 16 24 32 40 48 56 0 8 16 24 32 40 48 56 0 4 8 12 16 20 24 28 pae (%) p out (dbm), gain (db) input power (dbm) p out , gain, pae vs. p in temp.=+25 c p out gain pae freq.= 6.0ghz 100 800 1500 2200 2900 3600 4300 5000 0 8 16 24 32 40 48 56 0 4 8 12 16 20 24 28 drain current (ma) p out (dbm) input power (dbm) power, i d vs. p in temp.=+25 c p out i d freq.= 6.0ghz
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 6 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com typical performance (cont.) conditions unless otherwise specified: v d = 30v, i dq = 1.55a, v g = - 2.5v typical, cw 100 800 1500 2200 2900 3600 4300 5000 2.5 3 3.5 4 4.5 5 5.5 6 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c +25c +85c p in = 26dbm 27 30 33 36 39 42 45 48 0 4 8 12 16 20 24 28 p out (dbm) input power (dbm) power vs. frequency vs.p in 2.5ghz 4.0ghz 6.0ghz temp.=+ 25 c
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 7 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com application circuit notes: 1. v g must be bia sed from both side s (pin s 1 and 5 ). 2. v d must b e bi ased from both sides (pins 6 and 1 0 ) . 3. remove caps for pulsed drain operation. bias - up procedure 1. set i d to 4 .5 a, i g to 20ma 2. v g set to ?5.0v. 3 . v d set to +30 v. 4 . adjust v g until i dq ~ 155 0 ma ( v g ~ - 2. 5 v typical) 5 . turn on rf supply . bias - down procedure 1. turn off rf signal. 2. reduce v g to ?5.0v. ensure i d q ~ 0 ma . 3. set v d to 0v . 4. set v g to 0v.
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 8 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com pin description pin symbol description 1 , 5 v g gate voltage. (1) 2 , 4, 7, 9 n/c no internal connection; may be grounded or left open on pcb. 3 rf in input; matched to 50 ; dc short ed to ground. 6 , 10 v d bottom side drain voltage. (2) 8 rf out output; matched to 50 ; dc short ed to ground . (package base) rf and dc ground. notes: 1. bias network is required; must b e biased from both side s (pin s 1 and 5 ); s ee application circuit on pag e 7 as an example. 2. bias network is required; must be biased from both sides (pins 6 and 10 ) ; s ee application circuit on page 7 as an example.
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 9 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com evaluation board layout bill of material reference des. value description manuf. part number c1 C c4 0.1 f cap, 0603, 50 v, 10 % , x7r various c 5 C c 8 1 f cap, 1206, 50 v, 10%, x7r various
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 10 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com mechanical information C package information and dimensions marking: part number C tga2576 - 2 - f l year/week/lot code - yyww zzz batch id C m xxx notes: 1. unless specified otherwis e, dimensions are in millimeters (mm) . 2. unless specified o therwise, tolerances are 0.127 3. materials: package base: copper tungsten (cuw) composite package lid: lcd (liquid crystal polymer) package leads: kovar, mil i 23011c class 1 plating finish: gold (au) 1.27um minimum over nickel (ni) 2.54 to 8.89um assembly notes 1. 0 - 80 screws are recomm ended for mounting the tga2576 - 2 - f l to the board. 2. to improve the thermal and rf performance, we recommend the following: a) apply thermal compound or 4 mils i ndium shim between the package and the board. b) attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 3. apply solder to each pin of the tga2576 - 2 - fl .
t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan power amplifier preliminary datasheet: rev a 01 - 8 - 15 - 11 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: class 1 b value: 500v and <1000v test: human body model (hbm) standard: jedec standard jesd22 - a114 msl rating level 3 at +260 c convection reflow the part is rate d moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j - std - 020. solderability this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : 3a001.b.2.a contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@tri quint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death.

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